TSMC Mulls Another Fab for 2nm & Two Fabs for Advanced Packaging

4 min read
fairly difficult
Further capacity expansions are considered at TSMC
TSMC yet has to disclose details about its N2 (2 nm) fabrication process, but apparently the world's largest contract maker of semiconductors is confident that demand for this node will be so strong that it is already mulling building an extra fab to meet it, according to the company's chairman. In addition, TSMC reportedly plans to build two fabs for advanced chip packaging.

TSMC's N2: One Fab Planned, Another Is Considered

Officially, TSMC's N2 process is still in in the pathfinding and research mode as the foundry is studying materials as well as viable transistor structures. The home for TSMC's N2 development as well as initial production will be the company's site near Baoshan, Hsinchu County, Taiwan, the manufacturer revealed at its Technology Symposium last month. Right now, TSMC is finishing construction of its new R1 R&D facility that will be initially focused on N2 and will start operations next year. TSMC's first 2nm chips will be made at a new fab that will be built in four phases. At present, the company is in process of acquiring the land for the fab, so there is hardly any solid timeline for the facility that TSMC would like to disclose publicly.

(Image credit: TSMC)

If capacities offered by the new N2 fab near Baoshan are not enough to meet demand, then TSMC will build another leading-edge production facility at its site in Taichung, Taiwan, said Mark Liu, chairman of TSMC, reports DigiTimes.


It is generally believed that TSMC will adopt gate-all-around (GAAFET) transistor structure (aka nanowire, nanoribbon, etc.) for its N2 process node. The company has investigated GAAFETs for 15 years and recently demonstrated a working 32Mb nanosheet SRAM prototype at 0.46V, so GAA is the most likely transistor technology for N2.

(Image credit: TSMC)

Switching to a new transistor structure is a big deal not only for TSMC, but also for its partners and…
Anton Shilov
Read full article